1998. 7. 8 1/4 semiconductor technical data krc110m~KRC114M epitaxial planar pnp transistor revision no : 3 switching application. interface circuit and driver circuit application. features with built-in bias resistors. simplify circuit design. reduce a quantity of parts and manufacturing process. 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ equivalent circuit maximum rating (ta=25 1 ) r1 c e b characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 100 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
1998. 7. 8 2/4 krc110m~KRC114M revision no : 3 electrical characteristics (ta=25 1 ) note : * characteristic of transistor only. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 100 na emitter cut-off current i ebo v eb =5v, i c =0 - - 100 na dc current gain h fe v ce =5v, i c =1ma 120 - - collector-emitter saturation voltage v ce(sat) i c =10ma, i b =0.5ma - 0.1 0.3 v transition frequency f t * v ce =10v, i c =5ma - 250 - mhz input resistor krc110m r 1 - 4.7 - k u krc111m - 10 - krc112m - 100 - krc113m - 22 - KRC114M - 47 - switching time rise time krc110m t r v o =5v v in =5v r l =1k u - 0.025 - s krc111m - 0.03 - krc112m - 0.3 - krc113m - 0.06 - KRC114M - 0.11 - storage time krc110m t stg - 3.0 - krc111m - 2.0 - krc112m - 6.0 - krc113m - 4.0 - KRC114M - 5.0 - fall time krc110m t f - 0.2 - krc111m - 0.12 - krc112m - 2.0 - krc113m - 0.9 - KRC114M - 1.4 -
1998. 7. 8 3/4 krc110m~KRC114M revision no : 3 collector current i (ma) dc current gain h 0.1 fe 300 0.3 1 3 2k h - i fe c c 10 30 100 10 30 50 100 500 1k ta=100 c ta=25 c ta=-25 c v =5v ce 0.3 collector current i (ma) 0.1 dc current gain h fe 100 30 50 10 300 500 1k 2k v =5v 10 3 1 ta=100 c ta=25 c ta=-25 c ce 100 30 c h - i fe c dc current gain h collector current i (ma) 0.3 10 0.1 50 30 100 10 v =5v ta=-25 c 1 ce 3 100 30 c fe 1k 500 300 2k ta=25 c ta=100 c h - i c fe krc110m krc111m krc112m krc110m 0.3 collector current i (ma) 0.1 collector-emitter saturatin ce(sat) 0.1 0.05 0.03 0.01 1 0.5 0.3 2 i /i =20 10 3 1 ta=-25 c ta=25 c ta=100 c c 100 30 c v - i ce(sat) c voltage v (v) collector current i (ma) collector-emitter saturatin i /i =20 ta=-25 c ta=100 c 0.3 0.1 0.3 0.5 0.01 0.03 0.05 0.1 voltage v (v) ce(sat) 1 c 1310 ta=25 c krc111m 2 ce(sat) v - i c 30 100 c b b ce(sat) voltage v (v) collector-emitter saturatin collector current i (ma) ta=100 c 0.3 ta=-25 c 0.1 0.05 0.03 0.01 0.1 1 ta=25 c 310 100 30 c i /i =20 krc112m 0.5 0.3 1 2 b c v - i ce(sat) c
1998. 7. 8 4/4 krc110m~KRC114M revision no : 3 dc current gain h collector current i (ma) 0.3 10 0.1 50 30 100 10 v =5v ta=-25 c 1 ce 3 100 30 c fe 1k 500 300 2k ta=25 c ta=100 c h - i c fe krc113m ce(sat) voltage v (v) collector-emitter saturatin collector current i (ma) ta=100 c 0.3 ta=-25 c 0.1 0.05 0.03 0.01 0.1 1 ta=25 c 310 100 30 c i /i =20 krc113m 0.5 0.3 1 2 b c v - i ce(sat) c dc current gain h collector current i (ma) 0.3 10 0.1 50 30 100 10 v =5v ta=-25 c 1 ce 3100 30 c fe 1k 500 300 2k ta=25 c ta=100 c h - i c fe KRC114M ce(sat) voltage v (v) collector-emitter saturatin collector current i (ma) ta=100 c 0.3 ta=-25 c 0.1 0.05 0.03 0.01 0.1 1 ta=25 c 310 100 30 c i /i =20 KRC114M 0.5 0.3 1 2 b c v - i ce(sat) c
|
